采用外耦合电容式射频辉光放电等离子体 CVD 系统,在低于300℃的衬底温度下,制备出了 a—Si(1-x)C_x∶H 钝化膜.对含碳量不同的3种样品作了热稳定性实验(即高温存放、温度循环和退火).另外,还对同一号样品做了在不同温度下退火30min 的实验.结果表明,此钝化膜的释氢温度高于600℃.具有很好的热稳定性. A-Si (1-x) Cx: H passivation films were prepared by an outcoupling capacitive radio-frequency glow discharge plasma CVD system at a substrate temperature of less than 300 C. For a 3 The samples were tested for thermal stability (ie, high temperature storage, temperature cycling and annealing) .In addition, the same samples were annealed at different temperatures for 30 minutes.The results showed that the release temperature of this passivation film was higher than 600 ℃. Has good thermal stability.