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提出了一种超低功耗、无BJT的基于亚阈值CMOS特性的基准电压源。采用正负温度系数电流求和的方式来获得与温度无关的电流,再转换成基准电压;采用共源共栅电流镜来提高电源电压抑制比和电压调整率。基于SMIC 0.18μm CMOS工艺进行仿真,结果表明,在-20℃~135℃温度范围内,温漂系数为2.97×10~(-5)/℃;在0.9~3.3V电源电压范围内,电压调整率为0.089%;在频率为100Hz时,电源电压抑制比为-74dB,电路功耗仅有230nW。
An ultra-low-power, BJT-free reference voltage source based on sub-threshold CMOS characteristics is proposed. Using positive and negative temperature coefficient of current summation to get the temperature-independent current, and then converted to a reference voltage; using cascode current mirror to improve the power supply voltage rejection ratio and voltage regulation. Based on the SMIC 0.18μm CMOS process, the simulation results show that the temperature drift coefficient is 2.97 × 10 -5 / ℃ at the temperature range of -20 ℃ to 135 ℃, and the voltage is adjusted within the range of 0.9 ~ 3.3V supply voltage The rate of 0.089%; at a frequency of 100Hz, the supply voltage suppression ratio of-74dB, circuit power consumption is only 230nW.