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用分子束外延方法在GaAs（100）衬底上生长了Zn1-xMgxSe三元合金薄膜（0≤x≤1），用X-射线衍射和喇曼散射谱7研究了薄膜的结构，发现对x较小的样品，合金层为单一的（100）面闪锌矿结构，（111）面的含量可以忽略．对x≈0．5的样品，合金层中（100）和（111）面的闪锌矿结构共存，两种结构呈现不同的组分，且（111）结构的x值总是小于（100）结构．对x＝1的样品，外延层呈现单一的（100）氯化钠结构．对不同结构和含量所作的定量分析表明，（111）面闪锌矿结构可能是Zn1-xMgxSe合金从（100）面闪锌矿结构向（100）面氯化钠结构转变的中间相．
The Zn1-xMgxSe ternary alloy films (0≤x≤1) were grown on GaAs (100) substrate by molecular beam epitaxy. The structure of the films was investigated by X-ray diffraction and Raman scattering spectra. For the smaller samples, the alloy layer is a single (100) faceted sphalerite with negligible (111) face. For the sample of x ≈ 0.5, the (100) and (111) faces of the sphalerite structure coexist in the alloy layer, and the two structures show different components and the value of x in the (111) structure. For x = 1 samples, the epitaxial layer presents a single (100) sodium chloride structure. The quantitative analysis of different structures and contents shows that the (111) facetshape structure may be the mesophase of Zn1-xMgxSe transition from the (100) facets to the (100) facets.