论文部分内容阅读
用转矩磁强计和磁秤研究了直流溅射RFe_2(R: La,Ce,Pr,Nd,Sm,MM)非晶薄膜的饱和磁化强度M_s和平行膜面的单轴磁各向异性K_u的温度关系,以及等温退火对M_s和K_u的影响。RFe_2非晶膜的M_s和K_u值大致与T~(3/2)成正比,K_u与M_s成线性关系,而不与M_s~2成正比。不同膨胀系数的金属铝和玻璃作基片的非晶膜具有近似的M_s和K_u值,以及类似的温度关系。50℃等温退火一小时,非晶膜中产生明显的结构弛豫现象,使M_s和K_u明显增加。随后退火温度增加,M_s和K_u下降至一个最低值。晶化开始后,M_s和K_u~◥又迅速增加。根据上述实验结果,我们认为溅射非晶膜中平行膜面的单轴磁各向异性主要由非晶中存在的“伪晶”所贡献。
The saturation magnetization (M_s) and uniaxial magnetic anisotropy (K_u) of RF sputtered RFe_2 (R: La, Ce, Pr, Nd, Sm, MM) And the effect of isothermal annealing on M_s and K_u. The values of M_s and K_u for RFe_2 amorphous film are approximately proportional to T ~ (3/2), and K_u is linear with M_s and not proportional to M_s ~ 2. Amorphous films of aluminum and glass with different coefficients of expansion have similar M_s and K_u values, and similar temperature relationships. 50 ℃ isothermal annealing for one hour, the amorphous film in the obvious structural relaxation phenomenon, M_s and K_u significantly increased. Then the annealing temperature increases, M_s and K_u down to a minimum value. After the crystallization began, M_s and K_u ~ ◥ again increased rapidly. Based on the above experimental results, we believe that the uniaxial magnetic anisotropy of the parallel film surface in the sputtered amorphous film is mainly contributed by the “pseudo-crystal” existing in the amorphous.