本文测量了半导体CdSe薄膜电极在脉冲激光下的瞬态光电压行为。在多硫溶液和铁氰溶液中分别观察了载流子受光分离,本体和表面复合以及空穴,电子的界面氧化还原引起的光电压变化的快过程和慢过程。应用数字模拟技术进行了理论分析。通过模拟界面氧化还原反应所得到的反应速度常数K_p、K_n,讨论了CdSe薄膜电极在不同溶液中界面电荷转移的动力学行为. In this paper, the transient photovoltage behavior of semiconductor CdSe thin film electrodes under pulsed laser was measured. In the polysulfide solution and the ferricyanide solution, the fast and slow processes of photo-voltage changes induced by photoreceptor separation, bulk and surface recombination, and hole-electron redox interaction were observed. The application of digital simulation technology for theoretical analysis. The kinetic behaviors of CdSe thin film electrodes at different interfacial charges were discussed by simulating the reaction rate constants K_p and K_n obtained from the redox reaction at the interface.