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在借助光刻等微电子工艺手段的基础上,通过控制交替变换的阳极氧化电流成功地制备出了阵列化的多孔硅一维光子晶体,然后在其表面沉积了一层500 nm Si3N4用于改善其表面粗糙度,使该结构更好地应用于热释电红外传感器之中。通过傅里叶红外反射谱(FTIR)测试证明该样品有较好的光学反射性能,探索了将这种阵列化的多孔硅一维光子晶体应用于制备高性能红外热释电传感器衬底的可行性。
On the basis of microelectronic process such as photolithography, an arrayed porous silicon one-dimensional photonic crystal was successfully prepared by controlling alternating anodic oxidation current, and then a layer of 500 nm Si3N4 was deposited on the surface for improving Its surface roughness makes the structure better applied to pyroelectric infrared sensors. The samples were characterized by Fourier transform infrared spectroscopy (FTIR) and their optical reflectivity was tested. The feasibility of using this array of porous silicon one-dimensional photonic crystals for the fabrication of high performance pyroelectric sensor substrates was explored Sex.