利用金属有机物化学气相沉积技术在具有斜切角度的蓝宝石衬底(0~0.3°)上生长了非故意掺杂GaN薄膜,并采用显微镜、X射线双晶衍射、光荧光及霍尔技术对外延薄膜的表面形貌、晶体质量、光学及电学特性进行了分析。结果表明,采用具有斜切角度的衬底,可以有效改善GaN外延薄膜的表面形貌、降低位错密度、提高GaN的晶体质量及其光电特性,并且存在一个衬底最优斜切角度0.2°,此时外延生长出的GaN薄膜的表面形貌和晶体质量最好。 An unintentionally doped GaN film was grown on a sapphire substrate (0 ~ 0.3 °) with a chamfered angle by using a metal-organic chemical vapor deposition technique and the epitaxial growth was performed by using a microscope, X-ray double crystal diffraction, The film surface morphology, crystal quality, optical and electrical properties were analyzed. The results show that the substrate with a chamfered angle can effectively improve the surface morphology of the GaN epitaxial thin film, reduce the dislocation density, improve the crystal quality and the photoelectric properties of the GaN, and there is an optimum substrate bevel angle of 0.2 ° , At this time the epitaxial growth of GaN film surface morphology and crystal quality is best.