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本文的工作以内转换电子穆斯堡尔谱为主,并结合离子探针以及电学和光学等参数的测量,对硅中注入的F_e~+进行综合研究。根据实验结果我们认为在低温退火前后,高剂量注入的铁不是均匀地分布在注入层中,而是处在高浓度集中的微区中,并处在替位位置。低温退火后尽管晶体电学特性已基本恢复,但多数铁仍处于非电活性状态。高温退火后在注入层中形成铁硅化合物相的观点进一步由离子探针的实验结果得到证实。高温退火后晶体电阻率较大可能是由于铁硅化合物的析出在晶体中产生了大量的缺陷。
The work of this paper mainly focuses on the internal conversion of electronic Mossbauer spectroscopy. Combined with the ion probe and the measurement of electrical and optical parameters, the F_e ~ + implantation into silicon is studied. According to the experimental results, we think that the iron injected at high dose before and after low temperature annealing is not uniformly distributed in the implanted layer, but in the concentrated area with high concentration and at the alternate position. Although the electrical properties of the crystal have basically recovered after the low temperature annealing, most of the iron is still in a non-electroactive state. The idea of forming an iron-silicon compound phase in the implanted layer after the high temperature annealing is further confirmed by the experimental results of the ion probe. The crystal resistivity after high temperature annealing may be due to the precipitation of iron-silicon compounds in the crystal produced a lot of defects.