论文部分内容阅读
为了用计算机模拟亚微米肖特基势垒栅场效应晶体管,推导出一个准二维模型。该模型用准二维近似,以连续性方程、平均电子速度和能量恒定方程以及泊松方程的联立解为依据。提供了一种既能计算由晶体管沟道中不稳定电子动态特性而产生的非局部效应又能计算由载流子扩散引起的扩散效应的方法。研究了非局部效应和扩散效应对沟道上电场分布、电子浓度、速度、能量以及对晶体管的静态特性和超高频方面的影响,并对这两效应进行了比较。
In order to simulate the sub-micron Schottky barrier field effect transistor by computer, a quasi two-dimensional model is derived. The model is based on quasi-2D approximation with the continuity equation, the mean electron velocity and energy constant equation, and the simultaneous solution of the Poisson equation. A method is provided that calculates both the non-local effects caused by the unstable electron dynamics in the transistor channel and the diffusion effects caused by carrier diffusion. The effects of nonlocal and diffusional effects on the electric field distribution, electron concentration, velocity, energy, as well as the static characteristics and ultrahigh frequency of the transistor are studied. The two effects are compared.