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通过改变反应气体中硅烷体积分数,采用直流偏压辅助等离子体化学气相沉积法在玻璃衬底上沉积本征氢化纳米硅薄膜.使用拉曼光谱仪、原子力学显微镜和紫外可见光透射仪对薄膜进行测试,研究不同硅烷体积分数对薄膜微结构和光学性能的影响.结果表明:当硅烷体积分数增加,晶粒尺寸增加,而晶态含量却随之下降.晶态含量的降低,使拉曼光谱中谱峰的强度降低,峰位发生蓝移,薄膜有序性随之降低;而且薄膜的光学禁带宽度随硅烷体积分数的增加而增加.当硅烷体积分数为1.3%时,沉积本征氢化纳米硅薄膜,薄膜中晶粒分布均匀,其生长存在取向性.此时晶态含量约为50%,晶粒尺寸约为2.6 nm;薄膜具有较大的光学禁带宽度,为1.702 eV,以及较高的电导率.
The intrinsic hydrogenated nano-silica films were deposited on glass substrates by DC bias assisted plasma CVD by changing the volume fraction of silane in the reaction gas.The films were tested by Raman spectroscopy, atomic force microscopy and UV-visible transmission instrument , The effects of different volume fractions of silane on the microstructure and optical properties of the films were investigated.The results show that when the volume fraction of silane increases, the grain size increases while the crystalline content decreases, The intensity of the peak decreases, the blue shift occurs at the peak position, the order of the film decreases, and the optical band gap of the film increases with the increase of the volume fraction of silane. When the volume fraction of silane is 1.3%, intrinsic hydrogenated nano In the case of the silicon thin film, the crystal grains are uniformly distributed and the growth is oriented, and the crystal content is about 50% and the grain size is about 2.6 nm. The film has a larger optical band gap of 1.702 eV, High conductivity.