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A new complementary interface charge island structure of SOI high voltage device(CNI SOI) and its model are presented.CNI SOI is characterized by equidistant high concentration n~+-regions on the top and bottom interfaces of dielectric buried layers.When a high voltage is applied to the device,complementary hole and electron islands are formed on the two n~+-regions on the top and bottom interfaces.The introduced interface charges effectively increase the electric field of the dielectric buried layer(E_I) and reduce the electric field of the silicon layer(E_S),which result in a high breakdown voltage(BV).The influence of structure parameters and its physical mechanism on breakdown voltage are investigated for CNI SOI.E_I=731 V/μm and BV=750 V are obtained by 2D simulation on a 1-μm-thick dielectric layer and 5-μm-thick top silicon layer.Moreover,enhanced field E_I and reduced field E_S by the accumulated interface charges reach 641.3 V/μm and 23.73 V/μm,respectively.
A new complementary interface charge island structure of SOI high voltage device (CNI SOI) and its models are presented. CNI SOI is characterized by equidistant high concentration n ~ + -regions on the top and bottom interfaces of dielectric buried layers. is applied to the device, complementary hole and electron islands are formed on the two n ~ + -regions on the top and bottom interfaces.The introduced interface charges effectively increase the electric field of the dielectric buried layer (E_I) and reduce the electric field of the silicon layer (E_S), which results in a high breakdown voltage (BV). The influence of structure parameters and its physical mechanism on breakdown voltage are investigated for CNI SOI. E_I = 731 V / μm and BV = 750 V by 2D simulation on a 1-μm-thick dielectric layer and 5-μm-thick top silicon layer. Moreover, enhanced field E_I and reduced field E_S by the accumulated interface charges reach 641.3 V / μm and 23.73 V / μm, respectively.