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本文阐述了一种新型电阻混频器的设计及性能。该混频器利用GaAs金属半导体场效应管(简称MESFET,下同)的沟道电阻来实现混频。由于沟道电阻的线性度极高,所以引起的互调就很小。用目前的混频理论对该混频器进行分析,结果与测试性能相当一致。当本振功率为10dBm时,X波段混频器可达到如下指标:变频损耗6.5dB;噪声系数6.6dB;输出三阶互调截断点21.5dB;1dB压缩点9.1dBm。
This article describes the design and performance of a new type of resistor mixer. The mixer uses a GaAs metal-semiconductor field-effect transistor (MESFET, the same below) channel resistance to achieve mixing. Due to the high linearity of the channel resistance, the resulting intermodulation is small. The mixer is analyzed using the current mixing theory and the results are fairly consistent with the test performance. When the local oscillator power is 10dBm, the X band mixer can achieve the following indexes: frequency conversion loss of 6.5dB, noise figure of 6.6dB, output third-order intermodulation truncation point of 21.5dB and 1dB compression point of 9.1dBm.