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最近的两年多以来,65nm半节距(HP)光刻,传统上叫做45nm节点,在最先进的晶圆厂内十分活跃。其间出现了多种光刻技术选择方案,然而大多数逻辑和存储器公司最终决定,在最具挑战性的关键层中结合使用ArF干法、ArF浸没式和/或一些双重硬掩膜方法。在准备进入45nmHP技术开发之前,我们应该先问问自己,将会发生什么样的变化?极紫外(EUV)光刻能否及时准备就绪?该领域的大部分专家都认为答案是不能。那么,除此以外还有什么其它的选择?有两点是清楚的:设计规则仍将继续缩小,而我们却无法借助更短的光刻波长来实现45nmHP。那么该怎么办呢?
65nm half-pitch (HP) lithography, traditionally called the 45nm node, has been active in state-of-the-art fabs for more than two years. During this time a number of lithography options emerged, however most logic and memory companies ultimately decided to combine ArF dry, ArF immersion and / or some dual hardmask approaches with the most challenging critical layers. Before preparing for the development of the 45nm HPP technology, we should first ask ourselves what is going to happen. Is EUV lithography ready in time? Most experts in this field think the answer is no. So what other options are there? Two things are clear: Design rules will continue to shrink, but we will not be able to achieve 45 nm HP with shorter lithography wavelengths. Then what should be done?