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报道了一种基于全息曝光技术实现的20波长分布反馈式(DFB)半导体激光器阵列。传统的DFB半导体激光器光栅一般是利用电子束曝光的方式来实现,这种方式精度较高,然而成本昂贵并且非常耗时,不适合大规模生产应用,而全息方式制作容易,成本很低,适合大规模生产应用。实验结果表明,利用全息曝光技术实现的DFB激光器阵列具有良好的光电特性,激光器阵列的波长偏差在-0.5 nm至0.45 nm,阈值电流在13m A至17 m A,斜效率为0.4 W/A;50 m A偏置电流下,边模抑制比都大于40 d B。
A 20-wavelength distributed feedback (DFB) semiconductor laser array based on holographic exposure technology is reported. Conventional DFB semiconductor laser gratings are typically implemented using electron beam exposure, which is more accurate, yet costly and time consuming, not suitable for mass production applications, and holographic fabrication is easy and low cost and suitable Mass production applications. Experimental results show that the DFB laser array realized by holographic exposure has good photoelectric properties. The laser array has a wavelength deviation of -0.5 nm to 0.45 nm, a threshold current of 13 m A to 17 m A, and an oblique efficiency of 0.4 W / A. 50 m A bias current, the side mode suppression ratio is greater than 40 d B.