AlN是第三代直接宽带隙半导体材料的代表,具有宽带隙、高临界击穿电场、高热导率、高载流子饱和漂移速度等特点,在制作大功率微电子器件和紫外探测器等方面,具有广泛的应用前景。A lN在光电子领域的应用潜力也不容忽视。A lN作为GaN材料的衬底,与目前广泛使用的SiC和宝石衬底相 AlN is the third generation of direct wide bandgap semiconductor materials with wide bandgap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift speed and other characteristics, in the manufacture of high-power microelectronic devices and UV detectors and so on , Has a wide range of applications. A lN potential in the field of optoelectronics applications can not be ignored. AlN as a substrate of GaN material, and currently widely used SiC and gem substrate phase