研究了低栅电压范围的热载流子统一退化模型 .发现对于厚氧化层的 p- MOSFETs主要退化机制随应力电压变化而变化 ,随着栅电压降低 ,退化机制由氧化层俘获向界面态产生转变 ,而薄氧化层没有这种情况 ,始终是界面态产生 ;此外退化因子与应力电压成线性关系 .最后得出了不同厚度的 p- MOSFETs的统一退化模型 ,对于厚氧化层 ,退化由电子流量和栅电流的乘积决定 ,对于薄氧化层 ,退化由电子流量决定 The uniform degradation of hot carriers in the low gate voltage range was investigated, and the main degradation mechanism for p-MOSFETs with thick oxide layers was found to vary with the stress voltage. With the decrease of the gate voltage, the degradation mechanism was induced by the oxide layer capture to the interface state In the absence of a thin oxide layer, the interface state is always generated. In addition, the degradation factor is linearly proportional to the stress voltage. Finally, a unified degradation model of p-MOSFETs with different thicknesses is obtained. For a thick oxide layer, The product of flow rate and gate current is determined by the electron flow rate for thin oxide layers