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通过对铜电镀化学试剂、覆盖层厚度以及退火等条件的优化,可以将晶粒散射效应降低到最小程度,使铜互连电阻率只受到导线表面散射效应的限制。
Through the optimization of the copper plating chemistry, the thickness of the coating and the annealing conditions, the scattering effect of the crystal grains can be minimized, so that the copper interconnection resistivity is limited only by the scattering effect of the surface of the wire.