Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated,and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN S
Sodium beta-alumina(SBA) is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al_2O_3 as the precursors.The X-ray diffraction(XRD) spectru