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通过对感应耦合等离子体(ICP)设备装片夹具进行改进,提高了背氦的导热效率,减小了下电极基底与晶圆表面之间的温度差,提高了冷却效果。对装片夹具改进前后进行了对比实验,并分析了射频功率、ICP功率、下电极基底温度、腔室压力等参数对SiC背面通孔的刻蚀速率、选择比、倾斜角及侧壁光滑度的影响。通过装片夹具改进及工艺条件优化,开发出刻蚀速率为1μm/min、SiC与Ni的选择比大于60∶1、倾斜角小于85°、侧壁光滑的SiC通孔工艺条件,可用于SiC基GaN高电子迁移率晶体管(HEMT)、SiC金属半导体场效应管(MESFET)等大功率微波器件及其微波单片集成电路(MMIC)研制与生产的背面通孔刻蚀,并可缩短工艺时间降低生产成本。
By improving the loading fixture of inductively coupled plasma (ICP) equipment, the thermal conductivity of back-helium is improved, the temperature difference between the bottom electrode substrate and the wafer surface is reduced, and the cooling effect is improved. The comparison experiment before and after the improvement of the loading fixture was carried out. The etching rate, selectivity, inclination angle and sidewall smoothness of the SiC backside via were analyzed, such as RF power, ICP power, the temperature of the lower electrode substrate, chamber pressure and other parameters Impact. Through the improvement of the mounting fixture and the optimization of the process conditions, the SiC through-hole with the etching rate of 1μm / min, the selectivity ratio of SiC to Ni of more than 60: 1 and the inclination angle of less than 85 ° has been developed and can be used for SiC Based GaN high electron mobility transistor (HEMT), SiC metal semiconductor field effect transistor (MESFET) and other high-power microwave devices and their microwave monolithic integrated circuit (MMIC) development and production of back through hole etching, and can shorten the process time reduce manufacturing cost.