一、引言目前半导体器件制造中可以说是不可缺少光刻技术,对全工程(即指整个光刻工艺过程)的技术改进,其处理精度接近了受光的波长限制的阶段。但是,在用单一方法制作器件的情况下,对困难条件下的高精度光刻要求就更多。本文整理了对如下问题的讨论结果.光刻掩模的讨论,衬底表面凹凸非常大情况下光刻抗蚀剂的涂复,Au、Cr、Al_2O_3、Al、Si 等薄膜的高精度光刻,磷处理后的 SiO_2的 I. INTRODUCTION At present, the manufacturing of semiconductor devices is indispensable lithography. The technical improvement of the whole project (that is, the entire photolithography process) has a processing accuracy close to that of the light-receiving wavelength limit. However, in the case of devices fabricated by a single method, there is more demand for high-precision lithography under difficult conditions. This article has collated the discussion on the following issues: The discussion of photolithographic masks, the application of photolithographic resist under very large substrate surface roughness, the high-precision lithography of Au, Cr, Al 2 O 3, Al, Si, , Phosphorus-treated SiO 2