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通过一种新奇的方法在硅衬底上成功地合成了掺杂镁的氮化镓纳米线,用金属镁粉末作为掺杂源,然后在900℃时于流动的氨气中进行氨化Ga2O3薄膜制备GaN纳米线。X射线衍射(XRD)、扫描电镜(SEM)、透射电子显微镜(TEM)、选区电子衍射(SAED)和能量弥散X射线谱(EDX)的分析结果表明,采用此方法得到的GaN纳米线为六方纤锌矿结构,纳米线的直径大约在60~100nm之间,纳米线的长约十几个微米。EDX分析表明纳米线掺杂了镁。室温下以325nm波长的光激发样品表面,发现由于镁的掺杂使GaN的发光峰有较大的蓝移。最后,简单讨论了GaN纳米线的生长机制。
Magnesium-doped gallium nitride nanowires were successfully synthesized on a silicon substrate by a novel method using magnesium metal powder as a dopant source and then ammoniating a Ga2O3 film in flowing ammonia gas at 900 ° C Preparation of GaN nanowires. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and energy dispersive X-ray spectroscopy (EDX) analysis showed that the GaN nanowires obtained by this method are hexagonal Wurtzite structure, the diameter of nanowires is about 60 ~ 100nm, nanowires about ten microns. EDX analysis shows that the nanowires are doped with magnesium. The sample surface was excited by light with wavelength of 325nm at room temperature. It was found that there was a large blue shift of the emission peak of GaN due to the doping of magnesium. Finally, the growth mechanism of GaN nanowires is briefly discussed.