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本文对影响ＩｎＧａＡｓＰ／ＩｎＰ激光器阈值电流密度的晶格失配，掩埋异质结构和掺杂控制等问题进行了分析和讨论．从Ｋｕｐｈａｌ和Ａｒａｉ模型着手计算了与ＩｎＰ晶格匹配ＩｎＧａＡｓＰ的熔体组成．并从实验上进行了仔细调整．获得了激射波长为１．３μｍ．失配量≤１．４×１０－３的ＤＨ结构ＬＰＥ工艺条件．探讨了新的腐蚀工艺和二次外延工艺参数对掩埋异质结构形成的影响；提出采用二次外延过程中Ｚｎ扩散来控制限制层（３）掺杂的新方法，避免了纵向ｐ－ｎ结偏位现象的出现．获得了室温下阈值电流最低小于２５ｍＡ、在６０ｍＡ直流驱动下单面光输出功率高达１２．５ｍＷ、激射波长为１．３μｍ的ＩｎＧａＡｓＰ／ＩｎＰＤＣ－ＰＢＨ激光器．
In this paper, the problems of lattice mismatch, buried heterostructure and doping control affecting the threshold current density of InGaAsP / InP lasers are analyzed and discussed. The melt composition of InGaAsP lattice-matched to InP was calculated from the Kuphal and Arai models. And carefully adjusted experimentally. The lasing wavelength was obtained at 1.3 μm. DH structure with mismatched quantity ≤1.4 × 10-3 LPE process conditions. The influence of new etching process and secondary epitaxial process parameters on the formation of buried heterostructures was discussed. A new method was proposed to control the doping of the confinement layer (3) by Zn diffusion in the process of secondary epitaxy, avoiding the longitudinal p-n junction The phenomenon of deviation phenomenon. The InGaAsP / InPDC-PBH laser with the threshold current less than 25mA at room temperature and single-side light output up to 12.5mW and laser wavelength of 1.3μm at 60mA DC was obtained.