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建立了一套用于MOS结构辐照陷阱消长规律研究的快速I－V在线测试系统，用此系统可进行自动加偏和Ids－Vgs亚阈曲线测试，从而可快速定性定量地获得辐照和退火环境中氧化物电荷和Si／SiO_2界面态随辐照剂量、时间、偏置等的依赖关系。快速I－V测试系统最高可以达到1次／秒的Ids－Vgs测量速度。用此系统研究了PMOSFET5×10~3Gy（Si）总剂量辐照后100℃恒温退火下，辐照陷阱的消长规律和机制。
A fast I-V online test system for the study of the rule of the growth and decline of radiation irradiance in MOS structures was established. The system can be used to automatically bias and test the Ids-Vgs subthreshold curve, so that the irradiation and annealing can be quickly and qualitatively and quantitatively obtained The dependence of the charge on the oxide and the Si / SiO 2 interfacial state in the environment with the irradiation dose, time, bias and so on. Fast I-V test system up to 1 times / second Ids-Vgs measurement speed. Using this system, the rule and mechanism of the irradiation traps after the total dose of 5 × 10 ~ 3Gy (Si) of PMOSFET was annealed at 100 ℃ were studied.