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本文根据实验结果的分析,对双极型晶体管低能电子辐照效应的机理开展初步探讨。文中指出,低能电子辐照效应既不同于高能电子辐照效应,也不只是单纯的表面效应。作者提出,这种低能电子辐照效应的机理可能主要是电子束的加热—淬火作用或加热—退火作用以及电离作用引起晶体管体内及表面的缺陷状况发生变化,从而导致晶体管电性能的变化。
Based on the analysis of the experimental results, this paper explores the mechanism of the low-energy electron irradiation of bipolar transistors. The article pointed out that the low-energy electron irradiation effect is different from the high-energy electron radiation effects, nor is it simply a simple surface effect. The authors suggest that the mechanism of this low-energy electron irradiation may be mainly due to the fact that the heating-quenching or heating-annealing of the electron beam and the ionization cause the defects in the body and the surface of the transistor to change, resulting in changes in the electrical properties of the transistor.