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用可调探测深度电子能量损失谱(TRLS)及俄歇电子谱(AES)研究 Pb/Si(001)系统界面反应.结果表明:在室温下,Pb与Si发生相互作用、强烈互混,形成界面相,其厚度约(15±3)A,同时此相有确定的Pb/Si原子比,其根据是这个相有能量确定的、峰宽很窄的体等离激元峰,此峰能量为10.7eV,峰宽与Si的体等离激元峰相似.互混发生在氧污染很小的条件下,仅0.6ML 的氧就足以阻止互混的发生,形成陡变的无相互作用的 Pb/Si 界面.
The interfacial reaction of Pb / Si (001) system was investigated by using TRLS and AES.The results show that Pb and Si interact at room temperature and strongly intermix with each other to form The interface phase has a thickness of about (15 ± 3) A, and this phase has a defined Pb / Si atomic ratio based on a bulk plasmon peak of very narrow peak width determined by this phase energy. This peak energy Is 10.7 eV and the peak width is similar to the bulk plasmon peak of Si. Mutual mixing occurs with very little oxygen contamination and only 0.6 ML of oxygen is sufficient to prevent the occurrence of intermixing and the formation of abrupt Pb- / Si interface.