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华虹NEC和Alpha and Omega半导体(AOSL)已成功合作研制开发出新一代的沟道功率MOS场效应管(Trench Power MOSFET)技术。新开发的沟道功率MOS场效应管的电阻率比同类产品降低了20%以上。 AOSL与华虹NEC签订合作协议后,双方立即展开了对此种深亚微米技术产品的研究合作。全部功能都设计制作完毕,各设计参数均符合预定的要求,目前正在对已完成的工艺进行可靠性评价。
Hua Hong NEC and Alpha and Omega Semiconductor (AOSL) have successfully collaborated to develop a new generation of Trench Power MOSFET technology. The newly developed channel power MOSFET field-effect transistor resistivity than similar products reduced by more than 20%. AOSL and Huahong NEC signed a cooperation agreement, both immediately launched a research cooperation on such deep-submicron technology products. All functions have been designed and manufactured, the design parameters are in line with the predetermined requirements, is currently being carried out on the reliability of the process evaluation.