论文部分内容阅读
用MOCVD法生长了Bi-Sr-Ca-Cu-O超导薄膜。薄膜生长在水平式CVD装置中进行,采用的MO源为Cu(DPM)_2,Bi(C_5H_6)_2,Sr(DPM)_2和Ca(DPM)_2,薄膜衬底采用(100)和MgO晶片。反应器为热壁式石英反应器,采用高纯氮气作为载气。各源的源温与载气流量
Bi-Sr-Ca-Cu-O superconducting thin films were grown by MOCVD. Thin film growth was carried out in a horizontal CVD apparatus using MO source of Cu (DPM) 2, Bi (C_5H_6) _2, Sr (DPM) _2 and Ca (DPM) _2 and films of (100) and MgO wafers. The reactor is a hot-wall quartz reactor with high-purity nitrogen as the carrier gas. Source temperature and carrier gas flow of each source