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本文系统研究了AlGaN/GaN基高速电子迁移率晶体管器件界面热阻和工作温度对器件在高功率下的电流坍塌效应的影响规律.研究发现低漏极电压下热电子是导致负微分输出电导的重要因素,器件工作温度变高会使负微分输出电导减小.高漏极电压下自加热效应是导致电流坍塌的一个重要因素.随着界面热阻的增加,器件跨导降低,阈值电压增大.同时,由于工作环境温度的增高,器件随之温度增高,载流子迁移率会显著降低.最终这两种因素会引起AlGaN/GaN基高速电子迁移率晶体管器件显著的电流坍塌效应,从而降低了器件整体性能.
This paper systematically studies the influence of interface thermal resistance and operating temperature on the current collapse of devices under high power in AlGaN / GaN based high speed electron mobility transistors.It is found that the hot electron at low drain voltage leads to the negative differential output conductance Important factors, the device operating temperature will make the negative differential output conductance decreases.Auto-heating effect under high drain voltage is an important factor leading to the current collapse.As the interface thermal resistance increases, the device transconductance decreases, the threshold voltage increases At the same time, as the temperature of the working environment increases, the temperature of the device increases, the carrier mobility will be significantly reduced, and ultimately these two factors will cause significant current collapse effect of AlGaN / GaN based high speed electron mobility transistor device Reduce the overall performance of the device.