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本文说明用 SEM和V-I特性法研究 1.3μm InGaAsP/InP DH激光器中掺杂对 PN结位置及 PN结性质的影响.认为用 Zn作P型掺杂剂的 InGaAsP/InP DH 激光器中,由于Zn在InGaAsP和InP晶体中的快扩散及外延生长期间Zn蒸气沾污是PN结偏位的主要原因.施主和受主掺杂的高浓度会产生隧道型 PN 结. 因此在研制激光器的工艺中,控制Zn的沾污及掺杂剂的浓度是非常重要的.
In this paper, the effect of doping on the PN junction location and PN junction properties in 1.3μm InGaAsP / InP DH lasers is demonstrated by the SEM and VI characterization methods. In the InGaAsP / InP DH laser using Zn as P-type dopant, Zn The rapid diffusion in InGaAsP and InP crystals and the Zn vapor contamination during epitaxial growth are the main reasons for the PN junction misalignment. The high concentration of donor and acceptor will result in tunneling PN junctions. Therefore, in the process of developing lasers, The contamination of Zn and the concentration of dopants are very important.