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采用质量分析的低能离子束外延法生长了半导体性质的β-FeSi_2外延薄膜.就我们所知,在用同类方法的研究中,国际上尚属首次.AES测量及RHEED观察肯定了外延的β-FeSi_2的存在;垂直入射的光透射谱又证实了外延膜是具有直接禁带的、禁带宽度为～0.84 eV的半导体性质的薄膜.室温下的霍耳迁移率μH达600 cm~2V~(-1)s~(-1),比文献报道高两个量级.
The semi-conductive β-FeSi_2 epitaxial films were grown by low-energy ion beam epitaxy with mass spectrometry, which is the first time in the world that we study the same kind of method.AES measurement and RHEED observation confirm that the epitaxial β- The presence of FeSi_2 and the normal incident light transmission spectra confirm that the epitaxial film is a semiconducting film with a forbidden band width of ~ 0.84 eV. The Hall mobility at room temperature is about 600 cm ~ 2V ~ (- -1) s ~ (-1), two orders of magnitude higher than reported in the literature.