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考虑到少子准费米能级沿基区表面的非均匀分布,建立了集成双极晶体管基区表面电流的准二维模型。利用栅控晶体管作为测试结构,提取出了主要的基区表面参数。
Considering the inhomogeneous distribution of minority quasi-Fermi level along the surface of the base area, a quasi-two-dimensional model of the surface current of the base area of the bipolar transistor is established. Using gated transistors as the test structure, the main base surface parameters were extracted.