一、前言栅网结构多沟道场效应晶体管(多沟道面结型——栅场效应器件)这是一种新型场效应晶体管,它是从另一种场效应管——Tecnetron(场控管)发展过来的。早在1930年李林费尔德和奥斯卡·黑尔等人就提出过用场效应原理来制作器件的设想。1948年肖克莱和皮尔逊等人用锗进行了实验,1952年肖克莱提出了结型场效应晶体管的理论。1955年达西和罗斯等人考虑到载流子迁移率随电场 E~(-1/2)而变化的规律,从而修正了肖克莱的理论,并对器件样品进行分析,他的结论是:平面结构场效应器件 I. Introduction Grid Structure Multi-Channel Field Effect Transistor (Multi-Channel Junction-Gate Field Effect Device) This is a new type of field-effect transistor, which is derived from another field effect transistor, Tecnetron ) Developed over. As early as 1930, Li Lin Feld and Oscar Hale put forward the idea of ​​using the field effect principle to make the device. In 1948 Xiao Kelei and Pearson et al. Used germanium for experiments. In 1952, Xiao Kelei proposed the theory of junction field-effect transistors. In 1955 Darcy and Ross, who considered the carrier mobility changes with the electric field E ~ (-1/2) law, so as to amend the Shaw Klein theory and analysis of the device samples, he concluded : Planar Structure Field Effect Devices