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瑞士、澳地利和法国的研究人员联合开发出一种单片集成紫外(UV)和近红外(IR)光电探测器。该器件的AlN/GaN超晶格用于1.4μm探测,AlGaN缓冲层用于在250μm传感,这是向开发多光谱成象用的单传感器阵列迈出的一大步。使用一个以上的传感器阵列用于多色成象,其缺点是庞大笨重,价格
Researchers from Switzerland, Australia and France have jointly developed a monolithic integrated ultraviolet (UV) and near infrared (IR) photodetector. The AlN / GaN superlattice for this device is used for 1.4μm probing, and the AlGaN buffer layer for sensing at 250μm is a big step towards developing a single sensor array for multispectral imaging. The use of more than one sensor array for multicolor imaging has the disadvantage of being bulky, bulky, price