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设计了一款应用于4G(TD-LTE)的可变增益低噪声放大器(VGLNA)。输入级采用共栅极跨导增强结构,实现了电路的输入阻抗匹配,并且加入共栅极噪声抵消电路,降低了电路的噪声系数;第2级采用改进型电流舵结构,实现了电路的增益大范围连续可变;输出级采用源跟随器,实现了良好的输出阻抗匹配。基于TSMC 0.18μm CMOS工艺,利用安捷伦射频集成电路设计工具ADS2009进行仿真验证。结果表明:在1.88~2.65GHz频段内,该LNA在2.7~39.3dB增益范围内连续可变,且输入端口反射系数S_(11)小于-10dB,输出端口反射系数S_(22)小于-20dB,最小噪声系数NF为2.6dB,最大3阶交调点IIP3达到2.7dBm。
Designed a variable gain low noise amplifier (VGLNA) for 4G (TD-LTE). The input stage uses a common-gate transconductance enhancement structure to realize the input impedance matching of the circuit, and adds the common-gate noise cancellation circuit to reduce the noise figure of the circuit. The second stage adopts the improved current steering structure to achieve the gain of the circuit A wide range of continuous variable; output stage source follower, to achieve a good output impedance matching. Based on the TSMC 0.18μm CMOS process, the ADS2009 was used to verify the RFIC design. The results show that the LNA is continuously variable in the gain range of 2.7 ~ 39.3dB in the frequency band of 1.88 ~ 2.65GHz, the reflection coefficient of the input port S_ (11) is less than -10dB, the output port reflection coefficient S_ (22) is less than -20dB, The minimum noise figure NF is 2.6dB and the maximum 3rd order intercept point IIP3 reaches 2.7dBm.