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采用等离子体辉光监控系统(PEM)反馈控制反应溅射过程,在石英基底上制备出单斜相VO_2薄膜,并研究了反馈控制下反应溅射的等离子体相对辉光强度与氧气流量的关系。实验结果表明:在不同的反应压强(0.8 Pa、0.5 Pa、0.2 Pa)下,通过调整相对辉光强度值(REI)均可稳定获得单斜相VO_2薄膜,对应的REI值分别为0.6~0.65、0.65、0.6。XRD测试结果表明VO_2薄膜具有明显的(011)晶面取向,XPS测试结果表明薄膜的化学计量比为VO_(2.02)。VO_2薄膜在2.5μm处的变温透过率测试结果显示薄膜在相变前后的透过率变化达到65%,相变温度确定为66℃。
The plasma vapor deposition monitoring system (PEM) was used to control the reactive sputtering process. The monoclinic VO_2 thin films were prepared on a quartz substrate. The relationship between the plasma relative glow and reactive oxygen species under the feedback control was studied. . The experimental results show that the monoclinic VO_2 thin films can be stably obtained by adjusting the relative glow intensity (REI) at different reaction pressures (0.8 Pa, 0.5 Pa, 0.2 Pa), and the corresponding REI values are 0.6 ~ 0.65 , 0.65,0.6. The results of XRD showed that the VO_2 thin film had obvious (011) crystal plane orientation. The XPS results showed that the stoichiometric ratio of the thin film was VO_ (2.02). The results of the VO2 transmittance test at 2.5μm showed that the transmittance of the film before and after transformation was up to 65% and the phase transition temperature was set at 66 ℃.