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利用热重量分析法(简称TGA法)、X射线衍射(X-Ray diffraction)和扫描电镜观察(SEM)分析了SiC在MoSi_2低温氧化中的作用。结果表明SiC的加入促进了MoSi_2的氧化,但未发现“PEST”现象。
The effect of SiC on the low temperature oxidation of MoSi 2 was analyzed by thermogravimetry (TGA), X-ray diffraction and scanning electron microscopy (SEM). The results showed that the addition of SiC promoted the oxidation of MoSi 2, but no “PEST” phenomenon was found.