本文通过测量氧化物的初始击穿强度和与时间相关的介质击穿,估计了在硅片表面下注入氧化层后,在硅薄膜上生长的栅氧化物的质量。初始介质强度和击穿电荷与体硅片上生长的氧化物是相同的,因而作者认为硅膜里的高位错密度,不会使氧化物的质量严重下降。 This article estimates the mass of gate oxide grown on a silicon thin film by measuring the initial breakdown strength of the oxide and the time-dependent dielectric breakdown, after the oxide layer is implanted beneath the surface of the silicon wafer. The initial dielectric strength and breakdown charge are the same as those grown on bulk wafers, so the authors believe that the high dislocation density in the silicon film does not lead to a serious degradation of oxide quality.