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采用离子注入,红外快速热退火方法制造硅探则器,由喇曼散射方法检测损伤消除效果,确定快速热退火的温度,借助本征吸除等工艺技术,可以方便地得到性能优良的类视见函数光电探测器。
The silicon detector is manufactured by ion implantation and rapid thermal annealing of infrared. The damage elimination effect is detected by Raman scattering method. The temperature of the rapid thermal annealing is determined. By means of the technique of intrinsic aspiration and the like, the excellent performance can be easily obtained See function photodetector.