GTL 的原理金扩散晶体管逻辑(GTL)由接近本征的高电阻和常规的金扩散npn 晶体管组成。由于上述的金扩散,GTL 的各元件已自隔离,再不需任何其它的特殊隔离。金通常在半导体网络中被用来减短少数载流子的寿命。另一方面,当金深扩散进n型硅(双极集成电路中的外延层)中时,金的深受主能级将捕获电子,并补偿浅施主能级。因此,必将提高硅的电阻率。当金的浓度进一步增加时,电阻率就变得和本征硅一样。随着金的浓度进一步增加,电阻率达到一个最大值,并且材料变成P 型。GTL 确实是使用这个原理把接近本征的高值电阻(100KΩ～1MΩ)与隔离区组合 The Principle of GTL The gold-diffused transistor logic (GTL) consists of a near-native high-resistance and conventional gold-diffused npn transistor. Due to the above diffusion of gold, the various components of the GTL have been self-isolated and no further special isolation is required. Gold is commonly used in semiconductor networks to reduce the lifetime of minority carriers. On the other hand, when gold diffuses into n-type silicon (the epitaxial layer in a bipolar integrated circuit), the deep acceptor level of gold will trap the electrons and compensate for the shallow donor level. Therefore, it is bound to improve the resistivity of silicon. As the concentration of gold further increases, the resistivity becomes the same as intrinsic silicon. As the concentration of gold further increases, the resistivity reaches a maximum and the material becomes P-type. GTL is indeed using this principle to close the intrinsic high value of resistance (100KΩ ~ 1MΩ) with the isolation zone combination