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概述了高度各向异性的,尤其是无掺杂和掺杂的层状半导体GaSe和相关晶体InSe、GaS和GaSe-GaS(固溶液)的结构特性、光学特性和非线性光学特性的实验研究结果,同时概述了由共焦拉曼和光致发光显微镜研究得到的结果和由声波降解法和激光消融技术得到的GaSe纳米粒的光学性质。重点讨论了-εGaSe的性质,指出其具有最大的光学二阶非线性系数χ,并可结晶成4种不同的多型体(ε,γ,β,δ),且每个晶胞有以不同数目和排列方式的层状结构。研究认为,在红外和太赫兹光谱波段,GaSe可以被看作是最有应用前景的非线性晶体之一。已发表的1700多篇关于材料物理性质的论文也指出,在THz波段,GaSe是一种具有特异非线性光学特性的材料。通过共焦拉曼显微镜的实验研究,讨论了晶体的域结构和非线性光学性质。除了探讨这些材料最重要的物理性质,还进一步研究了在主边缘附近的光吸收,在红外和太赫兹波段的光致发光、非线性光学性质以及它们的纳米物理性质,这些研究对理解二维晶体结构和其物理性质之间的联系是必要的。由于GaSe及GaSe型晶体具有包含?Se-Ga-Ga-Se-共价键的单一四层结构,因而它们的纳米粒表现出一些特殊的性质。一些GaSe型晶体(InSe,GaTe)的带隙宽度在1.2~1.5 eV之间,这使得它们及其纳米粒很适合用作光伏材料。
The experimental results on the structural, optical and nonlinear optical properties of highly anisotropic, in particular, undoped and doped layered semiconductors GaSe and related crystals InSe, GaS and GaSe-GaS (solid solution) are summarized The results obtained from confocal Raman and photoluminescence microscopy and the optical properties of GaSe nanoparticles obtained by sonication and laser ablation techniques are also summarized. We mainly discuss the properties of -εGaSe, point out that it has the largest optical nonlinear coefficient χ and can crystallize into four different polymorphs (ε, γ, β, δ) The number and arrangement of layered structure. The study suggests that GaSe can be considered as one of the most promising nonlinear crystals in the infrared and terahertz spectral bands. Published more than 1,700 papers on the physical properties of materials also pointed out that in the THz band, GaSe is a material with a specific nonlinear optical properties. Through the experimental study of confocal Raman microscope, the domain structure and nonlinear optical properties of the crystal were discussed. In addition to exploring the most important physical properties of these materials, further studies of light absorption near the main edge, photoluminescence in the infrared and terahertz bands, nonlinear optical properties, and their nanophysical properties have also been conducted to understand two- dimensional The connection between the crystal structure and its physical properties is necessary. Since GaSe and GaSe type crystals have a single four-layer structure containing? Se-Ga-Ga-Se-covalent bonds, their nanoparticles exhibit some special properties. The bandgap width of some GaSe-type crystals (InSe, GaTe) is between 1.2 and 1.5 eV, making them and their nanoparticles well suited as photovoltaic materials.