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虽然电容器级钽中添加微量的掺杂元素如P、B、S等,可以抑制表面扩散,防上烧结时粉末表面积出现的有关损耗,从可增加单位重量的电容量,提高电容器的效率。但是,钽粉掺杂后,由于热氧化物厚度比较低的钽表面发生意想不到的化学反应,使钽氧化膜的质量大大降低。这种情况在电容器钽引线接头中比较常见。如果不好好了解这种现象,则可能将这种不良电介质膜混入电容器,从而影响其性能和可靠性。
Although the addition of trace amounts of doping elements in capacitor grade tantalum such as P, B, S and so on can restrain the surface diffusion and prevent the loss of the surface area of the powder during sintering, which can increase the capacitance per unit weight and improve the efficiency of the capacitor. However, tantalum oxide doping, due to thermal oxide thickness of the lower tantalum surface unexpected chemical reaction, the quality of the tantalum oxide film greatly reduced. This situation is more common in capacitor tantalum wire connectors. Without a good understanding of this phenomenon, it is possible to mix this poor dielectric film into the capacitor, affecting its performance and reliability.