论文部分内容阅读
光学光刻中的邻近效应校正是实现亚微米光刻的必要手段。作者基于波前加工的思想 ,提出亚分辨亮暗衬线结合辅助线条实现邻近效应校正的方法 ,分析了其校正机理 ,采用这种新方法 ,在可加工 0 .7μm光刻图形的I线投影曝光装置上加工出了 0 .5μm的光刻图形 ,取得了较好的实验结果 ,并与其它邻近效应的校正方法进行了比较。
Proximity effect correction in optical lithography is a necessary means of achieving sub-micron lithography. Based on the idea of wavefront processing, this paper proposes a method of resolving the proximity effect with sub-resolution bright and dark serifs and auxiliary lines, and analyzes the correction mechanism. With this new method, I-line projection of 0.71μm lithography The lithography pattern of 0. 5μm was processed on the exposure device, and the better experimental results were obtained and compared with the correction methods of other adjacent effects.