论文部分内容阅读
以解析分析为基础,研究矩形横截面 Nd:GdVO_4晶体受高斯分布半导体激光双端面偏心入射时温度场以及抽运面热形变分布情况。得出了矩形截面 Nd:GdVO_4晶体的温度场分布和端面热形变场通解表达式,同时对影响激光晶体温度场分布的各种因素进行了定量研究。并对偏心度对热形变影响的规律逆行了研究。由于双端偏心抽运是对于激光二极管端面抽运激光情况的一般讨论,所以更切合实际。这种方法还可以应用到其他激光晶体热问题研究中,为有效解决激光系统热问题提供了理论依据。
Based on the analysis and analysis, the temperature field and the distribution of thermal deformation on the pumping surface of a rectangular cross-section Nd: GdVO_4 crystal under eccentric incident of a double Gaussian distributed semiconductor laser are studied. The temperature field distribution of rectangular Nd: GdVO_4 crystal and the general solution of the thermal deformation field of the end face are obtained, and various factors affecting the temperature field distribution of the laser crystal are quantitatively studied. And the eccentricity of the thermal deformation of the law of retrograde research. Since double-ended eccentric pumping is a general discussion of the case of laser pumping the laser diode end face, it is more realistic. This method can also be applied to other laser crystal thermal problems, providing a theoretical basis for effectively solving the thermal problem of the laser system.