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提出了一种对BCCD(埋沟电荷耦合器件)沟道电势的直流测试方法,并对此进行了理论分析和实验研究,该方法能快速、准确地进行BCCD沟道电势测试,确定BCCD随栅压变化的沟道电势曲线。实验结果表明,选取宽长比为11/5的NMOS管、源电流为0.01μA的测试条件,能够很好地模拟BCCD的工作状态。通过对1 024×1 024可见光BCCD进行验证测试,证实该方法可靠。
A direct current test method for the channel potential of BCCD (Buried Ditch Charge Coupled Device) was proposed. Theoretical analysis and experimental study were conducted on this method. The method can quickly and accurately test the BCCD channel potential and determine the BCCD gate- Pressurized channel potential curve. The experimental results show that the test conditions of 0.01μA source current and NMOS transistor length / width ratio of 11/5 can well simulate the working condition of BCCD. Through the verification test of 1 024 × 1024 visible BCCD, the method is proved to be reliable.