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本文报道了MIS电容从Si到快速热氮化SiO_2膜的雪崩注入电流、平带电压漂移和雪崩注入技术所使用的驱动信号参数三者关系的实验结果,同时结合电子陷阱、氮化工艺、界面陷阱和少子寿命等因素对实验结果作了解释和讨论。
In this paper, the experimental results of the relationship between avalanche injection current, flat-band voltage drift and driving signal parameters used in avalanche-injection technique of MIS capacitor from Si to rapid thermal nitridation of SiO_2 film are reported in this paper. Combined with electron trap, nitridation process, Interface traps and fewer child life and other factors on the experimental results were explained and discussed.