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提出用激光诱导扩散法在室温电阻率大于15,000(Ω·cm)的P型高阻硅上制备低温欧姆接触(77—300K).研究了激光参数对低温比接触电阻值的影响关系,结合诱导区表面热学性质的理论计算讨论了实验结果.比较了二种不同的铟焊引线方法.
The low-temperature ohmic contact (77-300K) on P-type silicon with resistivity greater than 15,000 (Ω · cm) at room temperature is proposed by laser-induced diffusion method.The influence of laser parameters on the contact resistance at low temperature is studied, The theoretical calculation of the surface thermal properties of the zone discusses the experimental results and compares two different methods of indium soldering.