以前人们认为异质结双极型晶体管是硅锗新材料在微电子器件方面的最重要应用。根据最新的信息，指出这一器件具有很大的局限性，而正在崛起的硅锗ＭＯＳ场效应晶体管有可能是未来最有希望的高速器件。叙述了这种器件的物理基础、典型结构及性能。 Heterojunction bipolar transistors have previously been considered as the most important application of silicon germanium in microelectronic devices. According to the latest information, pointed out that this device has great limitations, and the rise of silicon germanium MOS field effect transistor is likely to be the most promising high-speed devices in the future. Describes the physical basis of this device, the typical structure and performance.