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利用THz时域频谱技术(THz-TDS)研究了硅基二氧化钒(VO2)纳米薄膜的光致绝缘体—金属相变特性.在连续光激发下前后,观察到了非常明显的THz透过率变化,并通过薄膜近似计算出了THz波段金属态VO2薄膜的电导率.根据实验结果建立了金属态VO2薄膜的等效Drude模型,得到了复电导率,复电容率以及复折射率等相关的基本参数,并通过基于时域有限积分法模拟了THz波穿透硅基金属态VO2薄膜的过程,验证了所建立的模型的正确性,为研究VO2薄膜的相变特性以及VO2薄膜在THz波段的应用提供了参考.
Photoinduced insulator-metal phase transition of thin films of vanadium dioxide (VO2) was investigated by using THz time-domain spectroscopy (THz-TDS) .Through the photoexcitation, a significant change of THz transmittance was observed , And the conductivity of the VO2 thin film in the THz band was calculated by thin film approximation.An equivalent Drude model of the metal VO2 thin film was established according to the experimental results and the basic relativities of the complex conductivity, complex permittivity and birefringence were obtained The time-domain finite integral method was used to simulate the THz wave penetrating through the VO2 thin film. The correctness of the model was verified. In order to study the phase transition characteristics of VO2 thin film and the VO2 thin film in the THz band Application provides a reference.