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引言过去十年,固态雷达发射机在性能和造价方面的竞争已发展到这样的程度,目前,至少一直到L波段的新系统和某些改进系统的设计已广泛采用这类发射机。这一技术领域与微波双极型晶体管达到的技术水平有密切关系。因此,固态雷达放大器首先出现在高功率发射机的前置放大器或激励级,或阵元功率电平较低的相控阵中。在这期间,出现了两个重要趋势:第一,证实了固态放大器的性能,一般来说,远比相应的电子管放大器性能优越。其带宽、稳定度和效率指标均属目前文献报导较好水平之列,而更重要的是,还证实了其可靠性改善了10—100倍。第二,发现并逐步解决了晶体管技术以及放大器设计和制造工艺方面存在的缺陷。在晶体管领域,这包括对有源区几何图形、金属
INTRODUCTION The performance and cost competitiveness of solid-state radar transmitters has grown to such an extent over the past decade that such transmitters are now widely used in the design of new systems and some improved systems, at least up to the L-band. This technical area is closely related to the technical level achieved by microwave bipolar transistors. Therefore, the solid-state radar amplifier first appeared in the high-power transmitter preamplifier or excitation stage, or array element power level lower phased array. During this period, two important trends emerged: first, the performance of the solid-state amplifier was confirmed, and in general, far superior performance than the corresponding tube amplifier. Its bandwidth, stability and efficiency indicators are the best reported in the literature, and more importantly, the reliability is also confirmed 10-100 times. Second, it discovered and gradually solved the transistor technology and amplifier design and manufacturing process defects. In the field of transistors, this includes active area geometry, metal