应用射频溅射法制备SnO_2膜。对SnO_2膜进行了AES、ESCA理化学分析,结果表明:SnO_2膜的成分完全由SnO_2所组成,膜中并没有分离的Sn的成分。同时也对SnO_2膜进行了气敏特性测试分析,结果表明:SnO_2和Pd/SnO_2膜对CH_4、CO、H_2、NO_2、H_2S等气体均有明显的敏感特性,当SnO_2膜表面掺入几十(?)P_d后,对上述气体的敏感性有所增加,工作温度可降低到150℃左右,选择性也有不同程度的改善。 Preparation of SnO_2 Film by RF Sputtering. The results of AES and ESCA physicochemical analysis showed that the composition of SnO 2 film was composed entirely of SnO 2, and the composition of Sn was not separated in the film. At the same time, the gas sensing properties of SnO_2 film were tested and analyzed. The results show that SnO_2 and Pd / SnO_2 films have obvious sensitivity to CH_4, CO, H_2, NO_2, H_2S and other gases. ?) P_d, the sensitivity of the gas increased, the working temperature can be reduced to about 150 ℃, the selectivity has varying degrees of improvement.